activity
20062024
most citedFerroelectric control of the spin texture in germanium telluride

189 citations · 747 across the 20 of their papers we have counts for

collaborators

21 papers

cond-mat.mtrl-sci2024★ 114 cited

Spontaneous nucleation and growth of GaN nanowires: Fundamental role of crystal polarity

Sergio Fernández-Garrido, Xiang Kong, Tobias Gotschke +4

We experimentally investigate whether crystal polarity affects the growth of GaN nanowires in plasma-assisted molecular beam epitaxy and whether their formation has to be induced b…

cond-mat.mtrl-sci2021★ 129 cited

Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe

Sara Varotto, Luca Nessi, Stefano Cecchi +17

Since its birth in the 1990s, semiconductor spintronics has suffered from poor compatibility with ferromagnets as sources of spin. While the broken inversion symmetry of some semic…

cond-mat.mtrl-sci2020★ 40 cited

Carrier diffusion in GaN -- a cathodoluminescence study. III: Nature of nonradiative recombination at threading dislocations

Jonas Lähnemann, Vladimir M. Kaganer, Karl K. Sabelfeld +5

We investigate the impact of threading dislocations with an edge component (a or a+c-type) on carrier recombination and diffusion in GaN(0001) layers close to the surface as well a…

cond-mat.mtrl-sci2020★ 16 cited

Carrier diffusion in GaN -- a cathodoluminescence study. II: Ambipolar vs. exciton diffusion

Oliver Brandt, Vladimir M. Kaganer, Jonas Lähnemann +8

We determine the diffusion length of excess carriers in GaN by spatially resolved cathodoluminescence spectroscopy utilizing a single quantum well as carrier collector or carrier s…

cond-mat.mtrl-sci2020

Influence of Mg doping on In adsorption and In incorporation in (In,Ga)N superlattices

Erdi Kuşdemir, Caroline Chèze, Raffaella Calarco

We present a detailed investigation of the mechanisms at play for the incorporation of In and Mg on the GaN(0001) surface during plasma-assisted molecular beam epitaxy (PAMBE). Fir…

cond-mat.mtrl-sci2020★ 17 cited

Carrier diffusion in GaN -- a cathodoluminescence study. I: Temperature-dependent generation volume

Uwe Jahn, Vladimir M. Kaganer, Karl K. Sabelfeld +8

The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution o…