160 citations · 2.7k across the 94 of their papers we have counts for
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Device Model for Graphene Bilayer Field-Effect Transistor
V. Ryzhii, M. Ryzhii, A. Satou +2
We present an analytical device model for a graphene bilayer field-effect transistor (GBL-FET) with a graphene bilayer as a channel, and with back and top gates. The model accounts…
High-Frequency Properties of a Graphene Nanoribbon Field-Effect Transistor
M. Ryzhii, A. Satou, V. Ryzhii +1
We propose an analytical device model for a graphene nanoribbon field-effect transistor (GNR-FET). The GNR-FET under consideration is based on a heterostructure which consists of a…
Nonequilibrium carriers in an intrinsic graphene under interband photoexcitation
A. Satou, F. T. Vasko, V. Ryzhii
We study nonequilibrium carriers (electrons and holes) in an intrinsic graphene at low temperatures under far- and mid-infrared (IR) radiation in a wide range of its intensities. T…
Device Model for Graphene Nanoribbon Phototransistor
Victor Ryzhii, Vladimir Mitin, Maxim Ryzhii +2
An analytical device model for a graphene nanoribbon phototransistor (GNR-PT) is presented. GNR-PT is based on an array of graphene nanoribbons with the side source and drain conta…
Why graphene conductivity is constant: scaling theory consideration
V. Vyurkov, V. Ryzhii
In the recent paper [arXiv:0802.2216, 15 Feb 2008], Kashuba argued that the intrinsic conductivity of graphene independent of temperature originated in strong electron-hole scatter…
Current-voltage characteristics of a graphene nanoribbon field-effect transistor
V. Ryzhii, M. Ryzhii, A. Satou +1
We present an analytical device model for a field-effect transistor based on a heterostructure which consists of an array of nanoribbons clad between the highly conducting substrat…