K. Agrawal

collaborators

3 papers

cond-mat.mtrl-sci2026

Î²-Ga2O3-Based Heterojunctions: Exploring Growth Orientations and Alloying on Electronic Properties

Mohamed Abdelilah Fadla, Khushabu Agrawal, Paolo La Torraca +3

We investigate the effects of alloying and growth orientation on the electronic properties of the ultra-wide bandgap semiconductor Î²-Ga2O3 and pseudomorphic (AlxGa1-x)2O3 alloy he…

cond-mat.supr-con2026

Quantum interference in a twisted high-Tc SQUID senses emergent interfacial order

Amit Basu, Samrat Ash, Ritajit Kundu +12

Engineering artificial systems by twisting and stacking van der Waals materials has proven to be an excellent platform for exploring emergent quantum phenomena that can be signific…

cond-mat.mtrl-sci2025

Defects in the $I^^{2}$ -Ga $_{2}$ O $_{3}$ ( $2 ˉ 01$ )/HfO $_{2}$ MOS system and the effect of thermal treatments

Khushabu. S. Agrawal, Paolo LaTorraca, Jonas Valentijn +9

We have investigated the properties of the $I^^{2}$ -Ga $_{2}$ O $_{3}$ ( $2 ˉ 01$ )/HfO $_{2}$ /Cr/Au MOS (metal-oxide-semiconductor) system after annealing (450 $^{\circ}$ C) in different ambient cond…

Î²-Ga2O3-Based Heterojunctions: Exploring Growth Orientations and Alloying on Electronic Properties

Quantum interference in a twisted high-Tc SQUID senses emergent interfacial order

Defects in the I^2-Ga2​O3​(2ˉ01)/HfO2​ MOS system and the effect of thermal treatments

Defects in the $I^^{2}$ -Ga $_{2}$ O $_{3}$ ( $2 ˉ 01$ )/HfO $_{2}$ MOS system and the effect of thermal treatments