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Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration
M. Glunk, J. Daeubler, L. Dreher +8
We present a systematic study on the influence of epitaxial strain and hole concentration on the magnetic anisotropy in (Ga,Mn)As at 4.2 K. The strain was gradually varied over a w…
Voltage controlled inversion of magnetic anisotropy in a ferromagnetic thin film at room temperature
M. Weiler, A. Brandlmaier, S. Gepraegs +7
The control of magnetic properties by means of an electric field is an important aspect in magnetism and magnetoelectronics. We here utilize magnetoelastic coupling in ferromagneti…
All Oxide Ferromagnet/Semiconductor Epitaxial Heterostructures
A. Nielsen, A. Brandlmaier, M. Althammer +6
Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructur…
Piezo-control of magnetic anisotropy in GaMnAs: Reversible manipulation of magnetization orientation and irreversible magnetization switching
C. Bihler, M. Althammer, A. Brandlmaier +8
We have investigated the magnetic properties of a piezoelectric actuator/ferromagnetic semiconductor hybrid structure. Using a GaMnAs epilayer as the ferromagnetic semiconductor an…