All Oxide Ferromagnet/Semiconductor Epitaxial Heterostructures
arXiv:0808.2245 · doi:10.1063/1.2998576
Abstract
Oxide based ferromagnet/semiconductor heterostructures offer substantial advantages for spin electronics. We have grown (111) oriented Fe3O4 thin films and Fe3O4/ZnO heterostructures on ZnO(0001) and Al2O3(0001) substrates by pulsed laser deposition. High quality crystalline films with mosaic spread as small as 0.03 degree, sharp interfaces, and rms surface roughness of 0.3 nm were achieved. Magnetization measurements show clear ferromagnetic behavior of the magnetite layers with a saturation magnetization of 3.2 muB/f.u. at 300 K. Our results demonstrate that the Fe3O4/ZnO system is an intriguing and promising candidate for the realization of multi-functional heterostructures.
4 pages, 3 figures
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- Analysis of the Transport Process Providing Spin Injection through an Fe/AlGaAs Schottky Barrier
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- Zinc Oxide - From Dilute Magnetic Doping to Spin Transport
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