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Electrically inert h-BN/bilayer graphene interface in all-2D-heterostructure FETs
Teerayut Uwanno, Takashi Taniguchi, Kenji Watanabe +1
Bilayer graphene field-effect transistors (BLG-FETs), unlike conventional semiconductors, are greatly sensitive to potential fluctuations due to the charged impurities in high-k ga…
2D Tunnel Field Effect Transistors (FETs) with a Stable Charge-Transfer-Type p-WSe Source
Junyang He, Nan Fang, Keigo Nakamura +4
Two-dimensional (2D) materials are highly promising for tunnel field effect transistors (TFETs) with low subthreshold swing and high drive current because the shorter tunnel distan…
Photonic Crystal Cavities from Hexagonal Boron Nitride
Sejeong Kim, Johannes E. Fröch, Joe Christian +7
Development of scalable quantum photonic technologies requires on-chip integration of components such as photonic crystal cavities and waveguides with nonclassical light sources. R…