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Defect scattering in graphene
Jian-Hao Chen, W. G. Cullen, C. Jang +2
Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scatteri…
Diffusive Charge Transport in Graphene on SiO2
J. -H. Chen, C. Jang, M. Ishigami +3
We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic va…
Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering
C. Jang, S. Adam, J. -H. Chen +3
We reduce the dimensionless interaction strength in graphene by adding a water overlayer in ultra-high vacuum, thereby increasing dielectric screening. The mobility limited by long…
Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
J. H. Chen, C. Jang, S. Xiao +2
The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is…