activity
20072009
most citedIntrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

3.2k citations · 5.8k across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mtrl-sci2009654 cited

Defect scattering in graphene

Jian-Hao Chen, W. G. Cullen, C. Jang +2

Irradiation of graphene on SiO2 by 500 eV Ne and He ions creates defects that cause intervalley scattering as evident from a significant Raman D band intensity. The defect scatteri…

cond-mat.mtrl-sci2008117 cited

Diffusive Charge Transport in Graphene on SiO2

J. -H. Chen, C. Jang, M. Ishigami +3

We review our recent work on the physical mechanisms limiting the mobility of graphene on SiO2. We have used intentional addition of charged scattering impurities and systematic va…

cond-mat.mtrl-sci2008360 cited

Tuning the effective fine structure constant in graphene: opposing effects of dielectric screening on short- and long-range potential scattering

C. Jang, S. Adam, J. -H. Chen +3

We reduce the dimensionless interaction strength in graphene by adding a water overlayer in ultra-high vacuum, thereby increasing dielectric screening. The mobility limited by long…

cond-mat.mtrl-sci20073.2k cited

Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2

J. H. Chen, C. Jang, S. Xiao +2

The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is…

cond-mat.other20071.5k cited

Charged Impurity Scattering in Graphene

J. H. Chen, C. Jang, M. S. Fuhrer +2

Since the experimental realization of graphene1, extensive theoretical work has focused on short-range disorder2-5, ''ripples''6, 7, or charged impurities2, 3, 8-13 to explain the…