4 papers
Exploring binary intermetallics for advanced interconnect applications using ab initio simulations
Kiroubanand Sankaran, Kristof Moors, Jean-Philippe Soulié +2
The challenge of increasing copper (Cu) resistivity with diminishing Cu interconnect dimensions in complementary metal-oxide-semiconductor (CMOS) transistors, along with the impera…
CuAl films as Alternatives to Copper for Advanced Interconnect Metallization
Jean-Philippe Soulié, Kiroubanand Sankaran, Geoffrey Pourtois +3
CuAl thin films with have been studied as potential alternatives for the metallization of advanced interconnects. First-principles simulations were…
Properties of Nb\_xTi\_{(1-x)}N thin films deposited on 300 mm silicon wafers for upscaling superconducting digital circuits
Daniel Pérez Lozano, Jean-Philippe Soulié, Blake Hodges +7
Scaling superconducting digital circuits requires fundamental changes in the current material set and fabrication process. The transition to 300 mm wafers and the implementation of…
AlSc thin films for advanced interconnect applications
Jean-Philippe Soulié, Kiroubanand Sankaran, Valeria Founta +7
AlSc thin films have been studied with compositions around AlSc ( = 0.75) for potential interconnect metallization applications. As-deposited 25 nm thick films w…