122 citations · 325 across the 9 of their papers we have counts for
10 papers · 1 filter
Gate-based spin readout of hole quantum dots with site-dependent factors
Angus Russell, Alexander Zotov, Ruichen Zhao +3
The rapid progress of hole spin qubits in group IV semiconductors has been driven by their potential for scalability. This is owed to the compatibility with industrial manufacturin…
Single-Hole Pump in Germanium
A. Rossi, N. W. Hendrickx, A. Sammak +3
Single-charge pumps are the main candidates for quantum-based standards of the unit ampere because they can generate accurate and quantized electric currents. In order to approach…
Relaxation dynamics of spin 3/2 silicon vacancies in 4H-Silicon carbide
A. J. Ramsay, A. Rossi
Room temperature optically detected magnetic resonance experiments on spin 3/2 Silicon vacancies in 4H-SiC are reported. The transition is accessed u…
Superconducting charge sensor coupled to an electron layer in silicon
Máté Jenei, Ruichen Zhao, Kuan Y. Tan +8
Schemes aimed at transferring individual electrons in semiconductor devices and detecting possible transfer errors have increasing importance for metrological applications. We stud…
Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector
Máté Jenei, Elina Potanina, Ruichen Zhao +7
We analyze charge fluctuations in a parasitic state strongly coupled to a superconducting Josephson-junction-based charge detector. The charge dynamics of the state resembles that…
Evidence for universality of tunable-barrier electron pumps
Stephen P. Giblin, Akira Fujiwara, Gento Yamahata +5
We review recent precision measurements on semiconductor tunable-barrier electron pumps operating in a ratchet mode. Seven studies on five different designs of pumps have reported…