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Tunneling anisotropic magnetoresistance of NiFe/IrMn/MgO/Pt stack: An antiferromagnet based spin-valve
B. G. Park, J. Wunderlich, X. Marti +9
Spin-valve is a microelectronic device in which high and low resistance states are realized by utilizing both charge and spin of carriers. Spin-valve structures used in modern hard…
Antiferromagnetic I-Mn-V semiconductors
T. Jungwirth, V. Novak, X. Marti +14
After decades of research, the low Curie temperature of ferromagnetic semiconductors remains the key problem in the development of magnetic semiconductor spintronic technologies. R…
Spin-orbit coupling induced anisotropy effects in bimetallic antiferromagnets: A route towards antiferromagnetic spintronics
Alexander B. Shick, Sergii Khmelevskyi, Oleg N. Mryasov +2
Magnetic anisotropy phenomena in bimetallic antiferromagnets MnAu and MnIr are studied by first-principles density functional theory calculations. We find strong and lattice-pa…