306 citations · 1.9k across the 41 of their papers we have counts for
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Gate-controlled charge transfer in Si:P double quantum dots
F. E. Hudson, A. J. Ferguson, C. C. Escott +4
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with sour…
Ion implanted Si:P double-dot with gate tuneable interdot coupling
V. C. Chan, T. M. Buehler, A. J. Ferguson +6
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capac…
Spin-Dependent Quasiparticle Transport in Aluminum Single Electron Transistors
A. J. Ferguson, S. E. Andresen, R. Brenner +1
We investigate the effect of Zeeman-splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single electron transistors (SETs). In the above-gap transp…