Kingsley Egbo

collaborators

4 papers

cond-mat.mtrl-sci2024

Combinatorial synthesis and characterization of thin film Al1-xRExN (RE = Pr3+, Tb3+) heterostructural alloys

Binod Paudel, John S. Mangum, Christopher L. Rom +8

The potential impact of cation-substituted AlN-based materials, such as Al1-xScxN, Al1-xGaxN, and Al1-xBxN, with exceptional electronic, electromechanical, and dielectric propertie…

cond-mat.mtrl-sci2024

Reliable operation of Cr $_{2}$ O $_{3}$ :Mg/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes at 600 $^{\circ}$ C

William A. Callahan, Kingsley Egbo, Cheng-Wei Lee +3

$β$ -Ga $_{2}$ O $_{3}$ -based semiconductor heterojunctions have recently demonstrated improved performance at high voltages and elevated temperatures and are thus promising for applicatio…

cond-mat.mtrl-sci2024

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature

Kingsley Egbo, Emily M. Garrity, William A. Callahan +6

NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes have attracted attention for high-power applications, but their high-temperature performance and reliability remain underexplored. Here we…

cond-mat.mtrl-sci2024

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys

Stephen Schaefer, Davi Febba, Kingsley Egbo +3

Molecular beam epitaxy is one of the highest quality growth methods, capable of achieving theoretical material property limits and unprecedented device performance. However, such u…

Combinatorial synthesis and characterization of thin film Al1-xRExN (RE = Pr3+, Tb3+) heterostructural alloys

Reliable operation of Cr2​O3​:Mg/ β-Ga2​O3​ p-n heterojunction diodes at 600∘C

NiGa2​O4​ interfacial layers in NiO/Ga2​O3​ heterojunction diodes at high temperature

Rapid screening of molecular beam epitaxy conditions for monoclinic (InxGa1-x)2O3 alloys

Reliable operation of Cr $_{2}$ O $_{3}$ :Mg/ $β$ -Ga $_{2}$ O $_{3}$ p-n heterojunction diodes at 600 $^{\circ}$ C

NiGa $_{2}$ O $_{4}$ interfacial layers in NiO/Ga $_{2}$ O $_{3}$ heterojunction diodes at high temperature