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20082026
most citedStrain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

65 citations · 66 across the 5 of their papers we have counts for

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cond-mat.mtrl-sci2026

Chiral Epitaxy: Enantioselective Growth of Chiral Nanowires on Low-Symmetry Two-Dimensional Materials

Noya Ruth Itzhak, Kate Reidy, Maya Levy-Greenberg +20

Chiral crystals exhibit useful handedness-dependent properties, including spin selectivity and circularly polarized light sensitivity, yet controlling which enantiomer forms during…

cond-mat.mtrl-sci2025

Graphene assisted III-V epitaxy towards substrate recycling

Naomie Messudom, Antonella Cavanna, Ali Madouri +6

Re-using the substrate is identified as a method for reducing the cost of high efficiency III-V solar cells. The approach investigated here consists in inserting a graphene layer o…

cond-mat.mtrl-sci2025

Full ab initio atomistic approach for morphology prediction of hetero-integrated crystals: A confrontation with experiments

Sreejith Pallikkara Chandrasekharan, Sofia Apergi, Chen Wei +6

Here, we propose a comprehensive first-principle atomistic approach to predict the Wulff-Kaischew equilibrium shape of crystals heterogeneously integrated on a dissimilar material.…

cond-mat.mtrl-sci2021★ 1 cited

Regulated dynamics with two-monolayer steps in vapor-solid-solid growth of nanowires

Edith Bellet-Amalric, Federico Panciera, Gilles Patriarche +5

The growth of ZnTe nanowires and ZnTe-CdTe nanowire heterostructures is studied by \emph{in situ} transmission electron microscopy. We describe the shape, and the change of shape,…

cond-mat.mtrl-sci2008★ 65 cited

Strain-Control of the magnetic anisotropy in (Ga,Mn)(As,P) ferromagnetic semiconductor layers

Aristide Lemaître, Audrey Miard, Laurent Travers +6

A small fraction of phosphorus (up to 10 %) was incorporated in ferromagnetic (Ga,Mn)As epilayers grown on a GaAs substrate. P incorporation allows reducing the epitaxial strain or…