Karim Ben Saddik

activity

20212024

most citedGrowth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates

7 citations · 15 across the 4 of their papers we have counts for

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2 papers · 1 filter

cond-mat.mtrl-sci2021★ 2 cited

A growth diagram for chemical beam epitaxy of GaP $_{1 - x}$ N $_{x}$ alloys on nominally $(001)$ -oriented GaP-on-Si substrates

Karim Ben Saddik, Basilio Javier García, Sergio Fernández-Garrido

The dilute-nitride ternary compound GaP $_{1 - x}$ N $_{x}$ is highly attractive to monolithically integrate pseudomorphic red light-emitting devices and photovoltaic cells with the sta…

cond-mat.mtrl-sci2021★ 6 cited

H $_{2}$ -diluted precursors for GaAs doping in chemical beam epitaxy

K. Ben Saddik, A. F. Braña, N. López +2

A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved using H $_{2}$ -diluted DTBSi and CBr $_{4}$ as gas precursors for Si and C. We s…

A growth diagram for chemical beam epitaxy of GaP1−x​Nx​ alloys on nominally (001)-oriented GaP-on-Si substrates

H2​-diluted precursors for GaAs doping in chemical beam epitaxy

A growth diagram for chemical beam epitaxy of GaP $_{1 - x}$ N $_{x}$ alloys on nominally $(001)$ -oriented GaP-on-Si substrates

H $_{2}$ -diluted precursors for GaAs doping in chemical beam epitaxy