7 citations · 15 across the 4 of their papers we have counts for
4 papers
Optomechanical cavities based on epitaxial GaP on nominally (001)-oriented Si
Paula Mouriño, Laura Mercadé, Miguel Sinusía Lozano +8
Gallium phosphide (GaP) has recently received considerable attention as a suitable material for building photonic integrated circuits due to its remarkable optical and piezoelectri…
Growth modes and coupled morphological-compositional modulations in GaP1-xNx layers grown on nominally (001)-oriented Si substrates
K. Ben Saddik, S. Fernandez-Garrido, R. Volkov +3
We investigated the chemical beam epitaxy of GaP1-xNx to correlate the growth parameters with their properties when they are grown on nominally (001)-oriented Si substrates, as des…
A growth diagram for chemical beam epitaxy of GaPN alloys on nominally -oriented GaP-on-Si substrates
Karim Ben Saddik, Basilio Javier García, Sergio Fernández-Garrido
The dilute-nitride ternary compound GaPN is highly attractive to monolithically integrate pseudomorphic red light-emitting devices and photovoltaic cells with the sta…
H-diluted precursors for GaAs doping in chemical beam epitaxy
K. Ben Saddik, A. F. Braña, N. López +2
A wide range of n- and p-type doping levels in GaAs layers grown by chemical beam epitaxy is achieved using H-diluted DTBSi and CBr as gas precursors for Si and C. We s…