activity
19972024
most citedAll-electric all-semiconductor spin field effect transistors

364 citations · 1.4k across the 24 of their papers we have counts for

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23 papers · 1 filter

cond-mat.mes-hall2024

Landau Level Single-Electron Pumping

E. Pyurbeeva, M. D. Blumenthal, J. A. Mol +5

We present the first detailed study of the effect of a strong magnetic field on single-electron pumping in a device utilising a finger-gate split-gate configuration. In the quantum…

cond-mat.mes-hall2019★ 3 cited

Orientation of hole quantum Hall nematic phases in an out-of-plane electric field

A. F. Croxall, F. Sfigakis, J. Waldie +2

We present observations of an anisotropic resistance state at Landau level filling factor in a two-dimensional hole system (2DHS), which occurs for certain values of hole d…

cond-mat.mes-hall2018★ 42 cited

Zero-Magnetic Field Fractional Quantum States

S. Kumar, M. Pepper, S. N. Holmes +4

Since the discovery of the Fractional Quantum Hall Effect in 1982 there has been considerable theoretical discussion on the possibility of fractional quantization of conductance in…

cond-mat.mes-hall2018★ 37 cited

Electrical control of the Zeeman spin splitting in two-dimensional hole systems

Elizabeth Marcellina, Ashwin Srinivasan, Dmitry Miserev +6

Semiconductor holes with strong spin-orbit coupling allow all-electrical spin control, with broad applications ranging from spintronics to quantum computation. Using a two-dimensio…

cond-mat.mes-hall2015★ 364 cited

All-electric all-semiconductor spin field effect transistors

Pojen Chuang, Sheng-Chin Ho, L. W. Smith +10

The spin field effect transistor envisioned by Datta and Das opens a gateway to spin information processing. Although the coherent manipulation of electron spins in semiconductors…

cond-mat.mes-hall2015★ 15 cited

Dependence of the 0.7 anomaly on the curvature of the potential barrier in quantum wires

L. W. Smith, H. Al-Taie, A. A. J. Lesage +9

Ninety eight one-dimensional channels defined using split gates fabricated on a GaAs/AlGaAs heterostructure are measured during one cooldown at 1.4 K. The devices are arranged in a…