271 citations · 567 across the 5 of their papers we have counts for
5 papers
Manifestation of electron-electron interaction in the magnetoresistance of graphene
Johannes Jobst, Daniel Waldmann, Igor V. Gornyi +2
We investigate the magnetotransport in large area graphene Hall bars epitaxially grown on silicon carbide. In the intermediate field regime between weak localization and Landau qua…
Implanted Bottom Gate for Epitaxial Graphene on Silicon Carbide
Daniel Waldmann, Johannes Jobst, Felix Fromm +4
We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which g…
The quasi-free-standing nature of graphene on H-saturated SiC(0001)
F. Speck, J. Jobst, F. Fromm +5
We report on an investigation of quasi-free-standing graphene on 6H-SiC(0001) which was prepared by intercalation of hydrogen under the buffer layer. Using infrared absorption spec…
How Graphene-like is Epitaxial Graphene? \\Quantum Oscillations and Quantum Hall Effect
Johannes Jobst, Daniel Waldmann, Florian Speck +4
We investigate the transport properties of high-quality single-layer graphene, epitaxially grown on a 6H-SiC(0001) substrate. We have measured transport properties, in particular c…
Atmospheric pressure graphitization of SiC(0001)- A route towards wafer-size graphene layers
Konstantin V. Emtsev, Aaron Bostwick, Karsten Horn +11
We have investigated epitaxial graphene films grown on SiC(0001) by annealing in an atmosphere of Ar instead of vacuum. Using AFM and LEEM we observe a significantly improved surfa…