Kittamet Chanchaiworawit

most citedRecord-High Electron Mobility and Controlled Low 10

^{15}

^{- 3}

Si-doping in (010)

β

-Ga

_{2}

_{3}

Epitaxial Drift Layers

36 citations · 37 across the 2 of their papers we have counts for

collaborators

2 papers

physics.app-ph2024★ 36 cited

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Carl Peterson, Arkka Bhattacharyya, Kittamet Chanchaiworawit +7

We report on metalorganic chemical vapor deposition (MOCVD) growth of controllably Si-doped 4.5 $μ$ m thick $β$ -Ga $_{2}$ O $_{3}$ films with electron concentrations in the 10 $^{15}$ cm$^{…

physics.app-ph2023★ 1 cited

Over 6 $μ$ m thick MOCVD-grown Low-Background Carrier Density (10 $^{15}$ cm $^{- 3}$ ) High-Mobility (010) $β$ -Ga $_{2}$ O $_{3}$ Drift Layers

Arkka Bhattacharyya, Carl Peterson, Kittamet Chanchaiworawit +4

This work reports high carrier mobilities and growth rates, simultaneously in low unintentionally-doped UID (10 $^{15}$ cm $^{- 3}$ ) MOCVD-grown thick $β$ -Ga $_{2}$ O $_{3}$ epitaxial drift…

Record-High Electron Mobility and Controlled Low 1015 cm−3 Si-doping in (010) β-Ga2​O3​ Epitaxial Drift Layers

Over 6 μm thick MOCVD-grown Low-Background Carrier Density (1015 cm−3) High-Mobility (010) β-Ga2​O3​ Drift Layers

Record-High Electron Mobility and Controlled Low 10 $^{15}$ cm $^{- 3}$ Si-doping in (010) $β$ -Ga $_{2}$ O $_{3}$ Epitaxial Drift Layers

Over 6 $μ$ m thick MOCVD-grown Low-Background Carrier Density (10 $^{15}$ cm $^{- 3}$ ) High-Mobility (010) $β$ -Ga $_{2}$ O $_{3}$ Drift Layers