3 citations · 3 across the 6 of their papers we have counts for
8 papers · 1 filter
Direct determination of antiferroelectric-to-ferroelectric phase transition pathways in PbZrO with Operando Electron Microscopy
Menglin Zhu, Michael Xu, Louis Alaerts +5
Under a sufficiently high applied electric field, a non-polar antiferroelectric material, such as \ce{PbZrO3}, can undergo a rapid transformation to a polar ferroelectric phase. Wh…
Operando Electron Microscopy of Nanoscale Electronic Devices on Non-Conductive Substrates
Menglin Zhu, Michael Xu, Zishen Tian +7
Achieving operating conditions comparable to ``bulk'' electronic devices, such as thin film capacitors, during \textit{operando} electron microscopy remains challenging, particular…
Optimizing Atomic Number Contrast in Multislice Electron Ptychography
Bridget R. Denzer, Colin Gilgenbach, James M. LeBeau
Here we explore the atomic number () dependence of multislice electron ptychography and approaches to optimize Z sensitivity. Specifically, we show that ptychography's -depen…
Grain Boundary Space Charge Engineering of Solid Oxide Electrolytes: Model Thin Film Study
Thomas Defferriere, Yong Beom Kim, Colin Gilgenbach +3
Grain boundaries (GB) profoundly influence the electrical properties of polycrystalline ionic solids. Yet, precise control of their transport characteristics has remained elusive,…
Sensitivity of Multislice Electron Ptychography to Point Defects: A Case Study in SiC
Aaditya Bhat, Colin Gilgenbach, Junghwa Kim +3
Here, we evaluate multislice electron ptychography as a tool to carry out depth-resolved atomic resolution characterization of point defects, using silicon carbide as a case study.…
Quantifying Implantation Induced Damage and Point Defects with Multislice Electron Ptychography
Junghwa Kim, Colin Gilgenbach, Aaditya Bhat +1
Here, we use multislice electron ptychography to quantify damage introduced by ion implantation of Er into 4H-SiC. Comparing reconstructed volumes from experiment (each 2,000 nm$^{…