Kai Fu

activity

20232026

G a_{2} O_{3}

Schottky Barrier Diode at High Temperatures up to 500 °C

1 citations · 2 across the 17 of their papers we have counts for

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cond-mat.mtrl-sci2025

In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C

Botong Li, Bobby G. Duersch, Hunter Ellis +6

The thermal stability and structural evolution of a GaN high-electron-mobility transistor (HEMT) heterostructure grown on a Si (111) substrate were investigated using in situ high-…

cond-mat.mtrl-sci2025

In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C

Hunter Ellis, Bobby G. Duersch, Botong Li +4

NiO is a promising p-type material for photovoltaics and power electronics, but its temperature limits remain unclear. Using in situ high-temperature X-ray diffraction (HT-XRD) fro…

cond-mat.mtrl-sci2025

High thermal conductivity of rutile-GeO $_{2}$ films grown by MOCVD: $52.9 W m^{- 1} K^{- 1}$

Imteaz Rahaman, Michael E. Liao, Ziqi Wang +10

Rutile germanium dioxide (r-GeO2) has recently emerged as a promising ultrawide-bandgap (UWBG) semiconductor owing to its wide bandgap (~4.4-5.1 eV), ambipolar doping potential, an…

physics.med-ph2025

$β$ -Ga $_{2}$ O $_{3}$ --Based Radiation Detector for Proton Therapy

Hunter D. Ellis, Imteaz Rahaman, Apostoli Hillas +3

Intensity modulated proton therapy (IMPT) is an advanced cancer treatment modality that offers significant advantages over conventional X-ray therapies, particularly in its ability…

cond-mat.mtrl-sci2025

Study of Optical Properties of MOCVD-Grown Rutile GeO2 Films

Imteaz Rahaman, Anthony Bolda, Botong Li +2

Rutile germanium dioxide (r-GeO $_{2}$ ) is a promising ultra-wide bandgap (UWBG) semiconductor, offering a high theoretical Baliga figure of merit, potential for p-type doping, and fa…

cond-mat.mtrl-sci2025

Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD

Imteaz Rahaman, Botong Li, Hunter D. Ellis +4

Rutile germanium dioxide (r-GeO2) is an ultra-wide bandgap semiconductor with potential for ambipolar doping, making it a promising candidate for next-generation power electronics…

cond-mat.mtrl-sci2025

Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO $_{2}$ Films Grown by MOCVD on r- and c-Plane Sapphires

Botong Li, Imteaz Rahaman, Hunter Ellis +3

Ultrawide-bandgap (UWBG) semiconductors, such as GeO $_{2}$ , are gaining significant attention for their potential in high-performance applications, particularly in piezoelectric devi…

physics.app-ph2025

Carbon-Nanotube/ $β$ -Ga $_{2}$ O $_{3}$ Heterojunction PIN Diodes

Hunter D. Ellis, Botong Li, Haoyu Xie +4

$β$ -Ga $_{2}$ O $_{3}$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptiona…

cond-mat.mtrl-sci2025★ 1 cited

Degradation of 2.4-kV $G a_{2} O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 °C

Hunter Ellis, Wei Jia, Imteaz Rahaman +5

Ga2O3 Schottky barrier diodes featuring a field plate and a composite SiO2/SiNx dielectric layer beneath the field plate were fabricated, achieving a breakdown voltage of 2.4 kV at…

In situ XRD Study of Strain Evolution in AlGaN/GaN HEMT at High Temperatures up to 1000 °C

In situ Study of p-NiO Film Quality at High Temperatures up to 1100 deg C

High thermal conductivity of rutile-GeO2​ films grown by MOCVD: 52.9 Wm−1K−1

β-Ga2​O3​--Based Radiation Detector for Proton Therapy

Study of Optical Properties of MOCVD-Grown Rutile GeO2 Films

Phase Competition and Rutile Phase Stabilization of Growing GeO2 Films by MOCVD

Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO2​ Films Grown by MOCVD on r- and c-Plane Sapphires

Carbon-Nanotube/β-Ga2​O3​ Heterojunction PIN Diodes

Degradation of 2.4-kV Ga2​O3​ Schottky Barrier Diode at High Temperatures up to 500 °C

High thermal conductivity of rutile-GeO $_{2}$ films grown by MOCVD: $52.9 W m^{- 1} K^{- 1}$

$β$ -Ga $_{2}$ O $_{3}$ --Based Radiation Detector for Proton Therapy

Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO $_{2}$ Films Grown by MOCVD on r- and c-Plane Sapphires

Carbon-Nanotube/ $β$ -Ga $_{2}$ O $_{3}$ Heterojunction PIN Diodes

Degradation of 2.4-kV $G a_{2} O_{3}$ Schottky Barrier Diode at High Temperatures up to 500 °C