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Seed-Driven Stepwise Crystallization (SDSC) for Growing Rutile GeO2 Films via MOCVD
Imteaz Rahaman, Botong Li, Bobby Duersch +2
Germanium dioxide (r-GeO2) is an emerging new ultrawide bandgap (UWBG) semiconductor with significant potential for power electronics, thanks to its large-size substrate compatibil…
A TEM Study of MOCVD-Grown Rutile GeO2 Films
Imteaz Rahaman, Botong Li, Hunter D. Ellis +3
Ultrawide bandgap (UWBG) semiconductors are promising for next-generation power electronics, largely attributed to their substantial bandgap and exceptional breakdown electric fiel…
Epitaxial Growth of Rutile GeO via MOCVD
Imteaz Rahaman, Bobby Duersch, Hunter D. Ellis +2
Rutile Germanium Dioxide (r-GeO) has been identified as an ultrawide bandgap (UWBG) semiconductor recently, featuring a bandgap of 4.68 eV, comparable to GaO but offeri…
Growth of GeO2 on R-plane and C-plane Sapphires by MOCVD
Imteaz Rahaman, Hunter D. Ellis, Kathy Anderson +2
Rutile Germanium Dioxide (GeO2) has been recently theoretically identified as an ultrawide bandgap (UWBG) semiconductor with bandgap 4.68 eV similar to Ga2O3 but having bipolar dop…