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cond-mat.mtrl-sci2024
High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
Vishnu Ottapilakkal, Abhishek Juyal, Suresh Sundaram +14
Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-o…
cond-mat.mtrl-sci2015
Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics
Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan +7
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown…