12 citations · 20 across the 5 of their papers we have counts for
5 papers
High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
Vishnu Ottapilakkal, Abhishek Juyal, Suresh Sundaram +14
Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-o…
Reduction of self-heating effects in GaN HEMT via h-BN passivation and lift-off transfer to diamond substrate: a simulation study
Fatima Z. Tijent, Mustapha Faqir, Paul L. Voss +2
In this article, we investigate through numerical simulation the reduction of self-heating effects (SHEs) in GaN HEMT via the integration of hexagonal boron nitride (h-BN) as a pas…
Nano selective area growth of GaN by MOVPE on 4H-SiC using epitaxial graphene as a mask: towards integrated III-nitride / graphene / SiC electronics and optoelectronics
Renaud Puybaret, Gilles Patriarche, Matthew B. Jordan +7
We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nano selective area growth (NSAG) with patterned epitaxial graphene grown…
Electro-optic and electrical properties in Hafnium-doped congruent lithium-niobate crystals
Mustapha Abarkan, Michel Aillerie, Jean-Paul Salvestrini +2
We report the optical and dielectric properties in hafnium (Hf)-doped lithium niobate (LN) crystals. We investigated samples of congruent composition with various doping concentrat…
Combined effects due to phase, intensity and contrast in electrooptic modulation. Application to ferroelectric materials
L. Guilbert, J. P. Salvestrini, H. Hassan +1
The combination of phase, intensity, and contrast effects during electrooptic modulation is theoretically and exper- imentally investigated. One consequence of this combination is…