56 citations · 279 across the 15 of their papers we have counts for
15 papers
Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors
S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich +3
Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies…
Percolation description of charge transport in amorphous oxide semiconductors
A. V. Nenashev, J. O. Oelerich, S. H. M. Greiner +3
The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the…
Fundamental characteristic length scale for the field dependence of hopping charge transport in disordered organic semiconductors
A. V. Nenashev, J. O. Oelerich, A. V. Dvurechenskii +2
Using analytical arguments and computer simulations we show that the dependence of the hopping carrier mobility on the electric field in a system of random sites is det…
Elastic strain field due to an inclusion of a polyhedral shape with a non-uniform lattice misfit
A. V. Nenashev, A. V. Dvurechenskii
An analytical solution in a closed form is obtained for the three-dimensional elastic strain distribution in an unlimited medium containing an inclusion with a coordinate-dependent…
Structures with Vertically Stacked Ge/Si Quantum Dots for Logical Operations
Yu. N. Morokov, M. P. Fedoruk, A. V. Dvurechenskii +2
Ge/Si structures with vertically stacked quantum dots are simulated to implement the basic elements of a quantum computer for operation with electron spin states. Elastic-strain fi…
Electron localization in self-assembled Si/Ge(111) quantum dots
Natalia Stepina, Aigul Zinovieva, Vladimir Zinovyev +3
Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge…
Simultaneous Localization of Electrons in different -valleys in Ge/Si Quantum Dot Structures
Aigul Zinovieva, Natalia Stepina, Anatoly Dvurechenskii +4
In the present work the possibility of simultaneous localization of two electrons in and valleys in ordered structures with Ge/Si(001) quantum dots (QD) was ver…
Quantum logic gates from time-dependent global magnetic field in a system with constant exchange
A. V. Nenashev, A. F. Zinovieva, A. V. Dvurechenskii +2
We propose a method for implementation of an universal set of one- and two-quantum-bit gates for quantum computation in the system of two coupled electrons with constant non-diagon…
Spin relaxation in inhomogeneous quantum dot arrays studied by electron spin resonance
A. F. Zinovieva, N. P. Stepina, A. I. Nikiforov +5
Electron states in a inhomogeneous Ge/Si quantum dot array with groups of closely spaced quantum dots were studied by conventional continuous wave () ESR and spin-echo methods.…
Universal behavior of magnetoresistance in quantum dot arrays with different degree of disorder
N. P. Stepina, E. S. Koptev, A. G. Pogosov +4
Magnetoresistance in two-dimensional array of Ge/Si quantum dots was studied in a wide range of zero-magnetic field conductances, where the transport regime changes from hopping to…
Role of Diffusion in Two-dimensional Bimolecular Recombination
A. V. Nenashev, F. Jansson, S. D. Baranovskii +3
Experiments on carrier recombination in two-dimensional organic structures are often interpreted in the frame of the Langevin model with taking into account only the drift of the c…
Effect of Electric Field on Diffusion in Disordered Materials II. Two- and Three-dimensional Hopping Transport
A. V. Nenashev, F. Jansson, S. D. Baranovskii +3
In the previous paper [Nenashev et al., arXiv:0912.3161] an analytical theory confirmed by numerical simulations has been developed for the field-dependent hopping diffusion coeffi…
Effect of Electric Field on Diffusion in Disordered Materials I. One-dimensional Hopping Transport
A. V. Nenashev, F. Jansson, S. D. Baranovskii +3
An exact analytical theory is developed for calculating the diffusion coefficient of charge carriers in strongly anisotropic disordered solids with one-dimensional hopping transpor…
Hopping conduction in strong electric fields: Negative differential conductivity
A. V. Nenashev, F. Jansson, S. D. Baranovskii +3
Effects of strong electric fields on hopping conductivity are studied theoretically. Monte-Carlo computer simulations show that the analytical theory of Nguyen and Shklovskii [Soli…
Strain distribution in quantum dot of arbitrary polyhedral shape: Analytical solution in closed form
A. V. Nenashev, A. V. Dvurechenskii
An analytical expression of the strain distribution due to lattice mismatch is obtained in an infinite isotropic elastic medium (a matrix) with a three-dimensional polyhedron-shape…