24 citations · 24 across the 1 of their papers we have counts for
3 papers
Percolation description of charge transport in the random barrier model applied to amorphous oxide semiconductors
S. D. Baranovskii, A. V. Nenashev, J. O. Oelerich +3
Charge transport in amorphous oxide semiconductors is often described as the band transport affected by disorder in the form of random potential barriers (RB). Theoretical studies…
Percolation description of charge transport in amorphous oxide semiconductors
A. V. Nenashev, J. O. Oelerich, S. H. M. Greiner +3
The charge transport mechanism in amorphous oxide semiconductors (AOS) is a matter of controversial debates. Most theoretical studies so far neglected the percolation nature of the…
Hopping conduction in strong electric fields: Negative differential conductivity
A. V. Nenashev, F. Jansson, S. D. Baranovskii +3
Effects of strong electric fields on hopping conductivity are studied theoretically. Monte-Carlo computer simulations show that the analytical theory of Nguyen and Shklovskii [Soli…