Electron localization in self-assembled Si/Ge(111) quantum dots

Abstract

Electron localization in the Si/Ge heterosystem with Si quantum dots (QDs) was studied by transport and electron spin resonance (ESR) measurements. For Si QD structures grown on Ge(111) substrates, the ESR signal with g-factor $g=2.0022\pm 0.0001$ and ESR line width $\Delta H\approx 1.2$ Oe was observed and attributed to the electrons localized in QDs. The g-factor value was explained by taking into account the energy band modification due to strain effects and quantum confinement. A strong Ge-Si intermixing in QD structures grown on Ge(001) is assumed to be main reason of unobserved ESR signal from QDs. The transport behavior confirms the efficient electron localization in Si QDs.

arXiv comment7 pages, 4 figures

References in corpus (4)

• Relaxation of excited spin, orbital, and valley qubit states in single electron silicon quantum dots
• Evolution of coherent islands during strained-layer Volmer-Weber growth of Si on Ge(111)
• Spin relaxation in inhomogeneous quantum dot arrays studied by electron spin resonance
• Universal behavior of magnetoresistance in quantum dot arrays with different degree of disorder