activity
20072017
most citedUnexpected structural and magnetic depth dependence of YIG thin films

55 citations · 111 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2017★ 55 cited

Unexpected structural and magnetic depth dependence of YIG thin films

J. F. K. Cooper, C. J. Kinane, S. Langridge +7

We report measurements on yttrium iron garnet (YIG) thin films grown on both gadolinium gallium garnet (GGG) and yttrium aluminium garnet (YAG) substrates, with and without thin Pt…

cond-mat.mtrl-sci2011

Tailoring the physical properties of poly(3-Hexylthiophene) thin films using electro-spray deposition

M. Ali, M. Abbas, S. K. Shah +4

Structural and electronic properties of homogeneous poly(3-Hexylthiophene) (P3HT) films ob- tained from the electro-spray method were presented by means of grazing incidence x-ray…

cond-mat.mtrl-sci2009

Microwave screening by conduction currents in thin magnetic films: application in stripline broadband FMR

M. Kostylev, K. J. Kennewell, R. Magaraggia +3

Ferromagnetic resonance in conducting magnetic bilayers was studied using microstrip transducers. It was found that excitation or suppression of standing spin waves could be achiev…

cond-mat.mtrl-sci2008

Non-equilibrium magnetism in dual spin valves

A. Aziz, O. P. Wessely, M. Ali +4

The field of spin electronics (spintronics) was initiated by the discovery of giant magnetoresistance (GMR) for which Fert[1] and Grunberg[2] were awarded the 2007 Nobel Prize for…

cond-mat.mtrl-sci2008★ 11 cited

Spin-transfer switching and low-field precession in exchange-biased spin valve nano-pillars

M. C. Wu, A. Aziz, D. Morecroft +5

Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Und…

cond-mat.other2007★ 45 cited

Controlled enhancement or suppression of exchange biasing using impurity -layers

M. Ali, C. H. Marrows, B. J. Hickey

The effects of inserting impurity -layers of various elements into a Co/IrMn exchange biased bilayer, at both the interface, and at given points within the IrMn layer a distance…