Spin-transfer switching and low-field precession in exchange-biased spin valve nano-pillars
arXiv:0802.1003 · doi:10.1063/1.2905816
Abstract
Using a three-dimensional focused-ion beam lithography process we have fabricated nanopillar devices which show spin transfer torque switching at zero external magnetic fields. Under a small in-plane external bias field, a field-dependent peak in the differential resistance versus current is observed similar to that reported in asymmetrical nanopillar devices. This is interpreted as evidence for the low-field excitation of spin waves which in our case is attributed to a spin-scattering asymmetry enhanced by the IrMn exchange bias layer coupled to a relatively thin CoFe fixed layer.
11 pages, 4 figures. To appear in APL, April 2008
References in corpus (7)
- Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars
- Spin-Diffusion Lengths in Metals and Alloys, and Spin-Flipping at Metal/Metal Interfaces: an Experimentalist's Critical Review
- Current-Driven Magnetic Excitations in Permalloy-Based Multilayer Nanopillars
- Shaped angular dependence of the spin transfer torque and microwave generation without magnetic field
- Current-induced spin-wave excitations in a single ferromagnetic layer
- An Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve
- Controlled normal and inverse magnetoresistance and current-driven magnetization switching in magnetic nanopillars