255 citations · 3.1k across the 55 of their papers we have counts for
25 papers · 1 filter
Stress-controlled zero-field spin splitting in silicon carbide
I. D. Breev, A. V. Poshakinskiy, V. V. Yakovleva +6
We report the influence of static mechanical deformation on the zero-field splitting of silicon vacancies in silicon carbide at room temperature. We use AlN/6H-SiC heterostructures…
Stress distribution at the AlN/SiC heterointerface probed by Raman spectroscopy
I. D. Breev, K. V. Likhachev, V. V. Yakovleva +5
We grow AlN/4H-SiC and AlN/6H-SiC heterostructures by physical vapor deposition and characterize the heterointerface with nanoscale resolution. Furthermore, we investigate the spat…
Mapping the stray fields of a nanomagnet using spin qubits in SiC
M. Bejarano, F. J. T. Goncalves, M. Hollenbach +7
We report the use of optically addressable spin qubits in SiC to probe the magnetic stray fields generated by a ferromagnetic microstructure lithographically patterned on the surfa…
Influence of irradiation on defect spin coherence in silicon carbide
C. Kasper, D. Klenkert, Z. Shang +10
Irradiation-induced lattice defects in silicon carbide (SiC) have already exceeded their previous reputation as purely performance-inhibiting. With their remarkable quantum propert…
Highly efficient optical pumping of spin defects in silicon carbide for stimulated microwave emission
M. Fischer, A. Sperlich, H. Kraus +3
We investigate the pump efficiency of silicon vacancy-related spins in silicon carbide. For a crystal inserted into a microwave cavity with a resonance frequency of 9.4 GHz, the sp…
Optical thermometry based on level anticrossing in silicon carbide
A. N. Anisimov, D. Simin, V. A. Soltamov +4
We report a giant thermal shift of MHz/K related to the excited-state zero-field splitting in the silicon vacancy centers in 4H silicon carbide. It is obtained from the ind…