Imteaz Rahaman

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physics.app-ph2025

Carbon-Nanotube/ $β$ -Ga $_{2}$ O $_{3}$ Heterojunction PIN Diodes

Hunter D. Ellis, Botong Li, Haoyu Xie +4

$β$ -Ga $_{2}$ O $_{3}$ is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptiona…

physics.app-ph2024

Epitaxial Growth of Rutile GeO $_{2}$ via MOCVD

Imteaz Rahaman, Bobby Duersch, Hunter D. Ellis +2

Rutile Germanium Dioxide (r-GeO $_{2}$ ) has been identified as an ultrawide bandgap (UWBG) semiconductor recently, featuring a bandgap of 4.68 eV, comparable to Ga $_{2}$ O $_{3}$ but offeri…

Carbon-Nanotube/β-Ga2​O3​ Heterojunction PIN Diodes

Epitaxial Growth of Rutile GeO2​ via MOCVD

Carbon-Nanotube/ $β$ -Ga $_{2}$ O $_{3}$ Heterojunction PIN Diodes

Epitaxial Growth of Rutile GeO $_{2}$ via MOCVD