5 papers
Study of Optical Properties of MOCVD-Grown Rutile GeO2 Films
Imteaz Rahaman, Anthony Bolda, Botong Li +2
Rutile germanium dioxide (r-GeO) is a promising ultra-wide bandgap (UWBG) semiconductor, offering a high theoretical Baliga figure of merit, potential for p-type doping, and fa…
Phase Evolution and Substrate-Dependent Nucleation of Quartz GeO Films Grown by MOCVD on r- and c-Plane Sapphires
Botong Li, Imteaz Rahaman, Hunter Ellis +3
Ultrawide-bandgap (UWBG) semiconductors, such as GeO, are gaining significant attention for their potential in high-performance applications, particularly in piezoelectric devi…
Nanoparticle Deposition Techniques for Silica Nanoparticles: Synthesis, Electrophoretic Deposition, and Optimization- A review
Srabani Karmakar, Milind Deo, Imteaz Rahaman +1
Silica nanoparticles have emerged as key building blocks for advanced applications in electronics, catalysis, energy storage, biomedicine, and environmental science. In this review…
Carbon-Nanotube/-GaO Heterojunction PIN Diodes
Hunter D. Ellis, Botong Li, Haoyu Xie +4
-GaO is gaining attention as a promising semiconductor for next-generation high-power, high-efficiency, and high-temperature electronic devices, thanks to its exceptiona…
Epitaxial Growth of Rutile GeO via MOCVD
Imteaz Rahaman, Bobby Duersch, Hunter D. Ellis +2
Rutile Germanium Dioxide (r-GeO) has been identified as an ultrawide bandgap (UWBG) semiconductor recently, featuring a bandgap of 4.68 eV, comparable to GaO but offeri…