7.86 kV GaN-on-GaN PN Power Diode with BaTiO3 for Electrical Field Management

Yibo Xu, Vijay Gopal Thirupakuzi Vangipuram, Vishank Telasara +7

Device based on GaN have great potential for high power switching applications due to its high breakdown field and high electron mobility. In this work, we present the device desig…