Monocrystalline Si/$\beta$-Ga${}_2$O${}_3$ p-n heterojunction diodes fabricated via grafting

Jiarui Gong, Donghyeok Kim, Hokyung Jang +19

The $\beta$-Ga${}_2$O${}_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices…