activity
20192025
most citedElectrical transport properties driven by unique bonding configuration in gamma-GeSe

26 citations · 69 across the 6 of their papers we have counts for

collaborators

6 papers

cond-mat.mes-hall2025

Planar Ballistic Electron Emission Spectroscopy for Single-Shot Probing of Energy Barrier Inhomogeneity at Junction Interface

Jiwan Kim, Jaehyeong Jo, Jungjae Park +5

We propose an experimental methodology for probing the energy barrier inhomogeneity at the metal/semiconductor interface without the need for time-consuming microscopic survey. It…

quant-ph2023★ 7 cited

Characterization of Broadband Purcell Filters with Compact Footprint for Fast Multiplexed Superconducting Qubit Readout

Seong Hyeon Park, Gahyun Choi, Gyunghun Kim +6

Engineering the admittance of external environments connected to superconducting qubits is essential, as increasing the measurement speed introduces spontaneous emission loss to su…

cond-mat.mtrl-sci2023★ 26 cited

Electrical transport properties driven by unique bonding configuration in gamma-GeSe

Jeongsu Jang, Joonho Kim, Dongchul Sung +11

Group-IV monochalcogenides have recently shown great potential for their thermoelectric, ferroelectric, and other intriguing properties. The electrical properties of group-IV monoc…

cond-mat.mtrl-sci2022★ 15 cited

Reversibly controlled ternary polar states and ferroelectric bias promoted by boosting square-tensile-strain

Jun Han Lee, Nguyen Xuan Duong, Min-Hyoung Jung +23

Interaction between dipoles often emerges intriguing physical phenomena, such as exchange bias in the magnetic heterostructures and magnetoelectric effect in multiferroics, which l…

cond-mat.mes-hall2022

Wide Effective Work-Function Tuning of Al/SiO/Si Junction Achieved with Graphene Interlayer at Al/SiO Interface

Wonho Song, Jung-Yong Lee, Junhyung Kim +7

The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate ex…

cond-mat.mes-hall2019★ 21 cited

Negative Fermi-level Pinning Effect of Metal/n-GaAs(001) Junction with Graphene Interlayer

Hoon Hahn Yoon, Wonho Song, Sungchul Jung +6

It is demonstrated that the electric dipole layer due to the overlapping of electron wavefunctions at metal/graphene contact results in negative Fermi-level pinning effect on the r…