Wide Effective Work-Function Tuning of Al/SiO${}_2$/Si Junction Achieved with Graphene Interlayer at Al/SiO${}_2$ Interface

Abstract

The effective work-function of metal electrode is one of the major factors to determine the threshold voltage of metal/oxide/semiconductor junction. In this work, we demonstrate experimentally that the effective work-function of Aluminum (Al) electrode in Al/SiO${}_2$/n-Si junction increases significantly by $\sim$1.04 eV with the graphene interlayer inserted at Al/SiO${}_2$ interface. We also provide the device-physical analysis of solving Poisson equation when the flat-band voltage is applied to the junction, supporting that the wide tuning of Al effective work-function originates from the electrical dipole layer formed by the overlap of electron orbitals between Al and graphene layer. Our work suggests the feasibility of constructing the dual-metal gate CMOS circuitry just by using Al electrodes with area-specific underlying graphene interlayer.

arXiv comment11 pages, 7 figures

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