most citedLattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension

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cond-mat.mtrl-sci2026

Machine-learning-guided molecular dynamics simulations of point defect evolution in beta-Ga2O3 during ion implantation and annealing

Huawen Li, Mengzhi Yan, Zongwei Xu +2

In beta-gallium oxide (beta-Ga2O3), Ga-ion implantation and annealing induce abundant point defects. To overcome conventional Wigner-Seitz (WS) defect analysis limitations, a defec…

cond-mat.mtrl-sci2025

A General-Purpose and Efficient Machine-Learned Potential for SiC from Ambient to Extreme Environments

Jintong Wu, Zhuang Shao, Junlei Zhao +5

Silicon carbide (SiC) polymorphs are widely employed as nuclear materials, mechanical components, and wide-bandgap semiconductors. The rapid advancement of SiC-based applications h…

cond-mat.mtrl-sci2024

Ultrahigh Stability of O-Sublattice in -GaO

Ru He, Junlei Zhao, Jesper Byggmästar +2

Recently reported remarkably high radiation tolerance of /-GaO double-polymorphic structure brings this ultrawide bandgap semiconductor to the frontiers of power elec…

cond-mat.mtrl-sci2024

Threshold displacement energy map of Frenkel pair generation in from machine-learning-driven molecular dynamics simulations

Huan He, Junlei Zhao, Jesper Byggmästar +4

phase gallium oxide (-) demonstrates tremendous potential for electronics applications and offers promising prospects for integration into future space systems…

cond-mat.mtrl-sci2024

Generalized Algorithm for Recognition of Complex Point Defects in Large-Scale β-

Mengzhi Yan, Junlei Zhao, Flyura Djurabekova +1

The electrical and optical properties of semiconductor materials are profoundly influenced by the atomic configurations and concentrations of intrinsic defects. This influence is p…

cond-mat.mtrl-sci2023

Universal radiation tolerant semiconductor

Alexander Azarov, Javier García Fernández, Junlei Zhao +10

Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluen…