107 citations · 277 across the 11 of their papers we have counts for
11 papers
Machine-learning-guided molecular dynamics simulations of point defect evolution in beta-Ga2O3 during ion implantation and annealing
Huawen Li, Mengzhi Yan, Zongwei Xu +2
In beta-gallium oxide (beta-Ga2O3), Ga-ion implantation and annealing induce abundant point defects. To overcome conventional Wigner-Seitz (WS) defect analysis limitations, a defec…
A General-Purpose and Efficient Machine-Learned Potential for SiC from Ambient to Extreme Environments
Jintong Wu, Zhuang Shao, Junlei Zhao +5
Silicon carbide (SiC) polymorphs are widely employed as nuclear materials, mechanical components, and wide-bandgap semiconductors. The rapid advancement of SiC-based applications h…
Ultrahigh Stability of O-Sublattice in -GaO
Ru He, Junlei Zhao, Jesper Byggmästar +2
Recently reported remarkably high radiation tolerance of /-GaO double-polymorphic structure brings this ultrawide bandgap semiconductor to the frontiers of power elec…
Threshold displacement energy map of Frenkel pair generation in from machine-learning-driven molecular dynamics simulations
Huan He, Junlei Zhao, Jesper Byggmästar +4
phase gallium oxide (-) demonstrates tremendous potential for electronics applications and offers promising prospects for integration into future space systems…
Generalized Algorithm for Recognition of Complex Point Defects in Large-Scale β-
Mengzhi Yan, Junlei Zhao, Flyura Djurabekova +1
The electrical and optical properties of semiconductor materials are profoundly influenced by the atomic configurations and concentrations of intrinsic defects. This influence is p…
Universal radiation tolerant semiconductor
Alexander Azarov, Javier García Fernández, Junlei Zhao +10
Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluen…
Complex Polymorphs Explored by Accurate and General-Purpose Machine-Learning Interatomic Potentials
Junlei Zhao, Jesper Byggmästar, Huan He +3
is a wide-bandgap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the proper…
Lattice-aligned gallium oxynitride nanolayer for GaN surface enhancement and function extension
Junting Chen, Junlei Zhao, Sirui Feng +8
Gallium nitride (GaN), as a promising alternative semiconductor to silicon, is of well-established use in photoelectronic and electronic technology. However, the vulnerable GaN sur…
Two-dimensional Ferroelectric Ga2O3 Bilayers with Unusual Strain-engineered Interlayer Interactions
Junlei Zhao, Xinyu Wang, Haohao Chen +2
Two-dimensional (2D) van der Waals (vdW) materials and their bilayers have stimulated enormous interests in fundamental researches and technological applications. Recently, a group…
Phase Transition of Two-Dimensional Ferroelectric and Paraelectric Ga2O3 Monolayer: A Density Functional Theory and Machine-Learning Study
Junlei Zhao, Jesper Byggmastar, Zhaofu Zhang +3
Ga2O3 is a wide-band-gap semiconductor of great interest for applications in electronics and optoelectronics. Two-dimensional (2D) Ga2O3 synthesized from top-down or bottom-up proc…
Migration barriers for surface diffusion on a rigid lattice: challenges and solutions
Ekaterina Baibuz, Simon Vigonski, Jyri Lahtinen +4
Atomistic rigid lattice Kinetic Monte Carlo is an efficient method for simulating nano-objects and surfaces at timescales much longer than those accessible by molecular dynamics. A…