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cond-mat.mtrl-sci2026
Influence of chemical vapor deposition conditions on N incorporation ratio on vicinal 4H-SiC(000-1) surface: Ab Initio-based approach
Wataru Ota, Akira Kusaba, Yoshihiro Kangawa +3
In experimental studies, increasing the ratio of source gases (C3H8/SiH4; C/Si ratio) for chemical vapor deposition (CVD) causes the growth rate to increase monotonically, and nitr…
cond-mat.mtrl-sci2026
Molecular dynamics with a first-principles-validated universal machine-learning potential reveals dynamic elementary processes of growth-related adspecies on GaN(0001)
Yoshito Takaesu, Akira Kusaba, Junko Ishii +2
Atomic-scale understanding of the surface elementary processes in metalorganic vapor phase epitaxy (MOVPE) of GaN has so far relied on static density-functional-theory (DFT) energe…