6 citations · 12 across the 4 of their papers we have counts for
5 papers
Influence of chemical vapor deposition conditions on N incorporation ratio on vicinal 4H-SiC(000-1) surface: Ab Initio-based approach
Wataru Ota, Akira Kusaba, Yoshihiro Kangawa +3
In experimental studies, increasing the ratio of source gases (C3H8/SiH4; C/Si ratio) for chemical vapor deposition (CVD) causes the growth rate to increase monotonically, and nitr…
Molecular dynamics with a first-principles-validated universal machine-learning potential reveals dynamic elementary processes of growth-related adspecies on GaN(0001)
Yoshito Takaesu, Akira Kusaba, Junko Ishii +2
Atomic-scale understanding of the surface elementary processes in metalorganic vapor phase epitaxy (MOVPE) of GaN has so far relied on static density-functional-theory (DFT) energe…
Limited Diffusion of Silicon in GaN: A DFT Study Supported by Experimental Evidence
Karol Kawka, Pawel Kempisty, Akira Kusaba +4
Silicon (Si) is the primary donor dopant in gallium nitride (GaN), introduced through epitaxial growth or ion implantation. However, precise control over Si diffusion remains a cri…
Augmentation of the Electron Counting Rule with Ising Model
Karol Kawka, Pawel Kempisty, Konrad Sakowski +4
On semiconductor growth surfaces, surface reconstructions appear. Estimation of the reconstructed structures is essential for understanding and controlling growth phenomena. In thi…
Beyond ab initio reaction simulator: an application to GaN metalorganic vapor phase epitaxy
Akira Kusaba, Shugo Nitta, Kenji Shiraishi +2
To develop a quantitative reaction simulator, data assimilation was performed using high-resolution time-of-flight mass spectrometry (TOF-MS) data applied to GaN metalorganic vapor…