7 citations · 17 across the 10 of their papers we have counts for
5 papers · 1 filter
Interface-engineered voltage-driven magnetic tunnel junctions with ultra-low-energy magnetization switching
Yu Zhang, Meng Xu, Bowei Zhou +9
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs)…
Optimizing Time-resolved Magneto-optical Kerr Effect for High-fidelity Magnetic Characterization
Yun Kim, Dingbin Huang, Deyuan Lyu +4
Spintronics has emerged as a key technology for fast and non-volatile memory with great CMOS compatibility. As the building blocks for these cutting-edge devices, magnetic material…
Anomalous vortex Hall effect in a ferromagnet/superconductor heterostructure
Weideng Sun, Przemyslaw Swatek, Yihong Fan +5
The coexistence of superconductivity and ferromagnetism is a fascinating and complex phenomenon in condensed matter physics, as these two states are typically mutually exclusive du…
Demonstration of Electron-Mediated Voltage-Controlled Exchange Coupling in Perpendicular Magnetic Tunnel Junctions
Qi Jia, Yu-Chia Chen, Delin Zhang +8
Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection.…
Fast spin precession and strong perpendicular magnetic anisotropy in ferrimagnetic Mn4N thin films improved by Pd buffer layer
Yao Zhang, Yun Kim, Peter P. Murmu +5
Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high…