7 citations · 17 across the 10 of their papers we have counts for
10 papers
Interface-engineered voltage-driven magnetic tunnel junctions with ultra-low-energy magnetization switching
Yu Zhang, Meng Xu, Bowei Zhou +9
Electric-field control of spin states offers a promising route to ultra-low-power, ultra-fast magnetization switching in spintronic devices such as magnetic tunnel junctions (MTJs)…
Optimizing Time-resolved Magneto-optical Kerr Effect for High-fidelity Magnetic Characterization
Yun Kim, Dingbin Huang, Deyuan Lyu +4
Spintronics has emerged as a key technology for fast and non-volatile memory with great CMOS compatibility. As the building blocks for these cutting-edge devices, magnetic material…
Anomalous vortex Hall effect in a ferromagnet/superconductor heterostructure
Weideng Sun, Przemyslaw Swatek, Yihong Fan +5
The coexistence of superconductivity and ferromagnetism is a fascinating and complex phenomenon in condensed matter physics, as these two states are typically mutually exclusive du…
Demonstration of Electron-Mediated Voltage-Controlled Exchange Coupling in Perpendicular Magnetic Tunnel Junctions
Qi Jia, Yu-Chia Chen, Delin Zhang +8
Electron-mediated voltage control of exchange coupling (EM-VCEC) has been proposed as a mechanism for magnetization switching via modulation of spin-dependent electron reflection.…
Fast spin precession and strong perpendicular magnetic anisotropy in ferrimagnetic Mn4N thin films improved by Pd buffer layer
Yao Zhang, Yun Kim, Peter P. Murmu +5
Ferrimagnets take the advantages of both ferromagnets and antiferromagnets making them promise for spintronic applications. Here we prepared ferrimagnetic Mn4N thin films with high…
Energy Efficient Stochastic Signal Manipulation in Superparamagnetic Tunnel Junctions via Voltage-Controlled Exchange Coupling
Qi Jia, Onri J. Benally, Brandon Zink +8
Superparamagnetic tunnel junctions (sMTJs) are emerging as promising components for stochastic units in neuromorphic computing, owing to their tunable random switching behavior. Co…
Giant spin Hall effect with multi-directional spin components in Ni4W
Yifei Yang, Seungjun Lee, Yu-Chia Chen +12
Spin-orbit torque (SOT) can be used to efficiently manipulate the magnetic state of magnetic materials, which is an essential element for memory and logic applications. Due to symm…
Perpendicular magnetic anisotropy, tunneling magnetoresistance and spin-transfer torque effect in magnetic tunnel junctions with Nb layers
Bowei Zhou, Pravin Khanal, Onri Jay Benally +7
Nb and its compounds are widely used in quantum computing due to their high superconducting transition temperatures and high critical fields. Devices that combine superconducting p…
Room temperature spin-orbit torque efficiency in sputtered low-temperature superconductor delta-TaN
Przemyslaw Wojciech Swatek, Xudong Hang, Yihong Fan +14
In the course of searching for promising topological materials for applications in future topological electronics, we evaluated spin-orbit torques (SOTs) in high-quality sputtered…
Bipolar electric field switching of perpendicular magnetic tunnel junctions through voltage controlled exchange coupling
Delin Zhang, Mukund Bapna, Wei Jiang +10
Perpendicular magnetic tunnel junctions (p-MTJs) switched utilizing bipolar electric fields have extensive applications in energy-efficient memory and logic devices. Voltage-contro…