7 citations · 8 across the 8 of their papers we have counts for
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Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown
Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3
This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm…
Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices
Sudipto Saha, Lingyu Meng, A F M Anhar Uddin Bhuiyan +4
The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demon…
Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates
A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +5
Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the pr…