Lingyu Meng

Defect-driven phase instability critically influences the structural reliability of ultrawide bandgap oxides, yet direct nanoscale metrics linking local chemistry to structural tra…

physics.app-ph2025★ 7 cited

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $β$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Dong Su Yu +6

This study investigates the electrical and structural properties of MOSCAPs with in-situ MOCVD-grown Al $_{2}$ O $_{3}$ dielectrics on (010) $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ …

cond-mat.mtrl-sci2023

Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3

This letter reports a highly scaled 90 nm gate length beta-Ga2O3 T-gate MOSFET with no current collapse and record power gain cut off frequency (fMAX). The epitaxial stack of 60 nm…

cond-mat.mtrl-sci2023

Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices

Sudipto Saha, Lingyu Meng, A F M Anhar Uddin Bhuiyan +4

The lack of p-type doping has impeded the development of vertical gallium oxide (Ga2O3) devices. Current blocking layers (CBL) using implanted deep acceptors has been used to demon…

cond-mat.mtrl-sci2023

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

A. F. M. Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +5

Phase pure \b{eta}-(AlxGa1-x)2O3 thin films are grown on (001) oriented \b{eta}-Ga2O3 substrates via metalorganic chemical vapor deposition (MOCVD). By systematically tuning the pr…

cond-mat.mtrl-sci2022★ 1 cited

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

Chinmoy Nath Saha, Abhishek Vaidya, A F M Anhar Uddin Bhuiyan +3

This letter reports high-performance $\mathrmβ Ga2O3 thin channel MOSFETs with T-gate and degenerately doped source/drain contacts regrown by MOCVD. Gate length scaling (LG= 160-20…

cond-mat.mtrl-sci2022

In-situ MOCVD Growth and Band Offsets of Al $_{2}$ O $_{3}$ Dielectric on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ thin films

A F M Anhar Uddin Bhuiyan, Lingyu Meng, Hsien-Lien Huang +2

The in-situ metalorganic chemical vapor deposition (MOCVD) growth of Al $_{2}$ O $_{3}$ dielectrics on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ films is investigated as a funct…

cond-mat.mtrl-sci2022

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

A F M Anhar Uddin Bhuiyan, Zixuan Feng, Hsien-Lien Huang +3

Epitaxial growth of \k{appa}-phase Ga2O3 thin films are investigated on c-plane sapphire, GaN- and AlNon-sapphire, and (100) oriented yttria stabilized zirconia (YSZ) substrates vi…

Coordination-Sensitive Nanoscale Analysis of Defect-Driven Phase Transformation in Si-Doped (AlXGa1-X)2O3

Electrical and Structural Properties of In-Situ MOCVD Grown Al2​O3​/β-Ga2​O3​ and Al2​O3​/β-(Alx​Ga1−x​)2​O3​ MOSCAPs

Sub-100 nm β-Ga2O3 MOSFET with 55 GHz fMAX and >100 V breakdown

Electrical Characteristics of in situ Mg-doped beta-Ga2O3 Current-Blocking Layer for Vertical Devices

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

Beta-Ga2O3 MOSFETs with near 50 GHz fMAX and 5.4 MV/cm average breakdown field

In-situ MOCVD Growth and Band Offsets of Al2​O3​ Dielectric on β-Ga2​O3​ and β-(Alx​Ga1−x​)2​O3​ thin films

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Electrical and Structural Properties of In-Situ MOCVD Grown Al $_{2}$ O $_{3}$ / $β$ -Ga $_{2}$ O $_{3}$ and Al $_{2}$ O $_{3}$ / $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ MOSCAPs

In-situ MOCVD Growth and Band Offsets of Al $_{2}$ O $_{3}$ Dielectric on $β$ -Ga $_{2}$ O $_{3}$ and $β$ -(Al $_{x}$ Ga $_{1 - x}$ ) $_{2}$ O $_{3}$ thin films