265 citations · 670 across the 18 of their papers we have counts for
12 papers · 1 filter
Correlated insulating states in slow Dirac fermions on a honeycomb moir{é} superlattice
Dongyang Yang, Jing Liang, Haodong Hu +8
Strong Coulomb repulsion is predicted to open a many-body charge gap at the Dirac point of graphene, transforming the semimetal into a Mott insulator. However, this correlated insu…
Nanosecond Ferroelectric Switching of Intralayer Excitons in Bilayer 3R-MoS2 through Coulomb Engineering
Jing Liang, Yuan Xie, Dongyang Yang +6
High-speed, non-volatile tunability is critical for advancing reconfigurable photonic devices used in neuromorphic information processing, sensing, and communication. Despite signi…
Resolving Polarization Switching Pathways of Sliding Ferroelectricity in Trilayer 3R-MoS2
Jing Liang, Dongyang Yang, Jingda Wu +5
Exploring the pathways of polarization switching in 2D sliding ferroelectrics with multiple internal interfaces is crucial for understanding the switching mechanism and for enhanci…
Optically Probing Unconventional Superconductivity in Atomically Thin BiSrCaYCuO
Yunhuan Xiao, Jingda Wu, Jerry I Dadap +11
Atomically thin cuprates exhibiting a superconducting phase transition temperature similar to bulk have recently been realized, although the device fabrication remains a challenge…
Non-volatile electrical polarization switching via domain wall release in 3R-MoS bilayer
Dongyang Yang, Jing Liang, Jingda Wu +5
Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we inv…
Shear-strain-induced two-dimensional slip avalanches in rhombohedral MoS2
Jing Liang, Dongyang Yang, Yunhuan Xiao +4
Slip avalanches are ubiquitous phenomena occurring in 3D materials under shear strain and their study contributes immensely to our understanding of plastic deformation, fragmentati…
Ultrafast response of spontaneous photovoltaic effect in 3R-MoS2-based heterostructures
Jingda Wu, Dongyang Yang, Jing Liang +8
Rhombohedrally stacked MoS2 has been shown to exhibit spontaneous polarization down to the bilayer limit and can sustain a strong depolarization field when sandwiched between graph…
Optically probing the asymmetric interlayer coupling in rhombohedral-stacked MoS2 bilayer
Jing Liang, Dongyang Yang, Jingda Wu +4
The interlayer coupling is emerging as a new parameter for tuning the physical properties of two-dimensional (2D) van der Waals materials. When two identical semiconductor monolaye…
Engineering the structural and electronic phases of MoTe2 through W substitution
D. Rhodes, D. A. Chenet, B. E. Janicek +30
MoTe is an exfoliable transition metal dichalcogenide (TMD) which crystallizes in three symmetries, the semiconducting trigonal-prismatic phase, the semimetallic $1T^{\pri…
Tuning the Electronic Structure of Monolayer Graphene/MoS2 van der Waals Heterostructures via Interlayer Twist
Wencan Jin, Po-Chun Yeh, Nader Zaki +9
We directly measure the electronic structure of twisted graphene/MoS2 van der Waals heterostructures, in which both graphene and MoS2 are monolayers. We use cathode lens microscopy…
Optical Third-Harmonic Generation in Graphene
Sung-Young Hong, Jerry I. Dadap, Nicholas Petrone +3
We report strong third-harmonic generation (THG) in monolayer graphene grown by chemical vapor deposition (CVD) and transferred to an amorphous silica (glass) substrate; the photon…
Trapping Surface Electrons on Graphene Layers and Islands
D. Niesner, Th. Fauster, J. I. Dadap +7
We report the use of time- and angle-resolved two-photon photoemission to map the bound, unoccupied electronic structure of the weakly coupled graphene/Ir(111) system. The energy,…