803 citations · 1.1k across the 17 of their papers we have counts for
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Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing
Moyu Chen, Yongqin Xie, Bin Cheng +11
Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant com…
Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor
Junlin Xiong, Jiao Xie, Bin Cheng +11
Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing…
Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating
Hanbo Xiao, Han Gao, Min Li +12
Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The p…
Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure
Yudi Dai, Junlin Xiong, Yanfeng Ge +13
The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While…