803 citations · 1.1k across the 17 of their papers we have counts for
17 papers
Room-temperature ferroelectrically switchable quantum geometry in few-layer WTe2 for complementary in-memory computing
Ruihan Wang, Pengfei Wang, Haoyun Chen +10
Quantum geometry, describing the inherent geometric structure of electron wavefunctions in momentum space, transcends the traditional charge degree of freedom and provides a novel…
Orientation-tunable correlated Chern insulating states in chiral twisted double bilayer graphene proximitized by WSe2
Jiao Xie, Yongqin Xie, Fanqiang Chen +9
Moire flat bands in graphene systems proximitized by transition-metal dichalcogenides (TMDCs) provide a setting where spin-orbit coupling (SOC) can reshape band topology. The cryst…
Tunable Extended Magnetic Non-Fermi Liquid in Graphene Moiré Heterostructures
Yongqin Xie, Jian Wang, Moyu Chen +13
Exploring exotic quantum metallic states beyond Landau's Fermi liquid theory remains a central focus in condensed matter physics. Such non-Fermi liquid behavior is mostly observed…
All-Electrical Self-Switching of van der Waals Chiral Antiferromagnet
Junlin Xiong, Jiawei Jiang, Yanwei Cui +13
Antiferromagnets have garnered significant attention due to their negligible stray field and ultrafast magnetic dynamics, which are promising for high-density and ultrafast spintro…
Dimensionality-Driven Anomalous Metallic State with Zero-field Nonreciprocal Transport in Layered Ising Superconductors
Yanwei Cui, Zenglin Liu, Qin Liu +10
The anomalous metal state (AMS), observed in failed superconductors, provides insights into superconductivity and quantum criticality, with studies revealing unconventional quantum…
Skin-inspired in-sensor encoding of strain vector using tunable quantum geometry
Zenglin Liu, Jingwen Shi, Jin Cao +15
Human skin provides crucial tactile feedback, allowing us to skillfully perceive various objects by sensing and encoding complex deformations through multiple parameters in each ta…
Selective and Quasi-continuous Switching of Ferroelectric Chern Insulator Device for Neuromorphic Computing
Moyu Chen, Yongqin Xie, Bin Cheng +11
Topologically protected edge state transport in quantum materials is dissipationless and features quantized Hall conductance, and shows great potential in highly fault-tolerant com…
Electrical switching of Ising-superconducting nonreciprocity for quantum neuronal transistor
Junlin Xiong, Jiao Xie, Bin Cheng +11
Nonreciprocal quantum transport effect is mainly governed by the symmetry breaking of the material systems and is gaining extensive attention in condensed matter physics. Realizing…
Tunable moiré bandgap in hBN-aligned bilayer graphene device with in-situ electrostatic gating
Hanbo Xiao, Han Gao, Min Li +12
Over the years, great efforts have been devoted in introducing a sizable and tunable band gap in graphene for its potential application in next-generation electronic devices. The p…
Interfacial magnetic spin Hall effect in van der Waals Fe3GeTe2/MoTe2 heterostructure
Yudi Dai, Junlin Xiong, Yanfeng Ge +13
The spin Hall effect (SHE) allows efficient generation of spin polarization or spin current through charge current and plays a crucial role in the development of spintronics. While…
Moire synaptic transistor for homogeneous-architecture reservoir computing
Pengfei Wang, Moyu Chen, Yongqin Xie +6
Reservoir computing has been considered as a promising intelligent computing paradigm for effectively processing complex temporal information. Exploiting tunable and reproducible d…
Parallel in-memory wireless computing
Cong Wang, Gong-Jie Ruan, Zai-Zheng Yang +13
Parallel wireless digital communication with ultralow power consumption is critical for emerging edge technologies such as 5G and Internet of Things. However, the physical separati…
Cascadable in-memory computing based on symmetric writing and read out
Lizheng Wang, Junlin Xiong, Bin Cheng +17
The building block of in-memory computing with spintronic devices is mainly based on the magnetic tunnel junction with perpendicular interfacial anisotropy (p-MTJ). The resulting a…
Approaching intrinsic threshold breakdown voltage and ultra-high gain in graphite/InSe Schottky photodetector
Zhiyi Zhang, Bin Cheng, Jeremy Lim +10
Realizing both ultra-low breakdown voltage and ultra-high gain has been one of the major challenges in the development of high-performance avalanche photodetector. Here, we report…
Tunable quantum criticalities in an isospin extended Hubbard model simulator
Qiao Li, Bin Cheng, Moyu Chen +13
Studying strong electron correlations has been an essential driving force for pushing the frontiers of condensed matter physics. In particular, in the vicinity of correlation-drive…
Observation of Coexisting Dirac Bands and Moiré Flat Bands in Magic-Angle Twisted Trilayer Graphene
Yiwei Li, Shihao Zhang, Fanqiang Chen +17
Moiré superlattices that consist of two or more layers of two-dimensional materials stacked together with a small twist angle have emerged as a tunable platform to realize various…
Robust memristors based on layered two-dimensional materials
Miao Wang, Songhua Cai, Chen Pan +11
Van der Waals heterostructure based on layered two-dimensional (2D) materials offers unprecedented opportunities to create materials with atomic precision by design. By combining s…