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Anomalous valley Hall effect in electric-potential-difference antiferromagnetic monolayer
Dun-Cheng Liang, San-Dong Guo, Shaobo Chen
The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hind…
Intrinsic persistent spin helix in 2D T-XY (XY=P, As, Sb and Bi)
San-Dong Guo, Xu-Kun Feng, Dong Huang +2
The persistent spin helix (PSH) is robust against spin-independent scattering and renders an extremely long spin lifetime, which can improve the performance of potential spintronic…
Ultra-low lattice thermal conductivity induces high-performance thermoelectricity in Janus group-VIA binary monolayers
Shao-Bo Chen, San-Dong Guo, Bing Lv +3
In this paper, the electrical transport, thermal transport, and thermoelectric properties of three new Janus STe, SeTe, and SeTe monolayers are systematically stu…
Proposal for valleytronic materials: ferrovalley metal and valley gapless semiconductor
San-Dong Guo, Yu-Ling Tao, Guang-Zhao Wang +2
Valleytronic materials can provide new degrees of freedom to future electronic devices. In this work, the concepts of the ferrovalley metal (FVM) and valley gapless semiconductor (…