Anomalous valley Hall effect in electric-potential-difference antiferromagnetic $\mathrm{C}{\mathrm{r}}_2\mathrm{CHCl}$ monolayer

Abstract

The antiferromagnetic (AFM) valleytronics can be intrinsically more energy-saving and fast-operating in device applications. In general, the lacking spontaneous spin-splitting hinders the implementation and detection of anomalous valley Hall effect (AVHE). Here, we propose to implement AVHE in electric-potential-difference antiferromagnetic $\mathrm{C}{\mathrm{r}}_2\mathrm{CHCl}$ monolayer with excellent stability, where the spontaneous spin-splitting can be induced due to layer-dependent electrostatic potential caused by out-of-plane built-in electric field. From a symmetry perspective, the introduction of Janus structure breaks the combined symmetry ($PT$ symmetry) of spatial inversion ($P$) and time reversal ($T$), which gives rise to spin-splitting. Both unstarined and strained monolayer $\mathrm{C}{\mathrm{r}}_2\mathrm{CHCl}$ possess valley splitting of larger than 51 meV, which is higher than the thermal energy of room temperature (25 meV). The layer-locked Berry curvature gives rise to layer-locked AVHE. Our work reveals a route to achieve AVHE in AFM monolayer with spontaneous spin-splitting.

6 pages, 6 figures. arXiv admin note: text overlap with arXiv:2404.17596, arXiv:2312.07202, arXiv:2405.18826