activity
20222024
most citedTuRaN: True Random Number Generation Using Supply Voltage Underscaling in SRAMs

2 citations · 2 across the 1 of their papers we have counts for

collaborators

5 papers

cs.AR2024

RowPress Vulnerability in Modern DRAM Chips

Haocong Luo, Ataberk Olgun, A. Giray Yağlıkçı +6

Memory isolation is a critical property for system reliability, security, and safety. We demonstrate RowPress, a DRAM read disturbance phenomenon different from the well-known RowH…

cs.AR2023

PULSAR: Simultaneous Many-Row Activation for Reliable and High-Performance Computing in Off-the-Shelf DRAM Chips

Ismail Emir Yuksel, Yahya Can Tugrul, F. Nisa Bostanci +8

Data movement between the processor and the main memory is a first-order obstacle against improving performance and energy efficiency in modern systems. To address this obstacle, P…

cs.CR2023

Read Disturbance in High Bandwidth Memory: A Detailed Experimental Study on HBM2 DRAM Chips

Ataberk Olgun, Majd Osseiran, Abdullah Giray Yaglikci +6

We experimentally demonstrate the effects of read disturbance (RowHammer and RowPress) and uncover the inner workings of undocumented read disturbance defense mechanisms in High Ba…

cs.CR2023

ABACuS: All-Bank Activation Counters for Scalable and Low Overhead RowHammer Mitigation

Ataberk Olgun, Yahya Can Tugrul, Nisa Bostanci +6

We introduce ABACuS, a new low-cost hardware-counter-based RowHammer mitigation technique that performance-, energy-, and area-efficiently scales with worsening RowHammer vulnerabi…

cs.AR20222 cited

TuRaN: True Random Number Generation Using Supply Voltage Underscaling in SRAMs

İsmail Emir Yüksel, Ataberk Olgun, Behzad Salami +6

Prior works propose SRAM-based TRNGs that extract entropy from SRAM arrays. SRAM arrays are widely used in a majority of specialized or general-purpose chips that perform the compu…