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20212026
most citedTuRaN: True Random Number Generation Using Supply Voltage Underscaling in SRAMs

2 citations · 4 across the 12 of their papers we have counts for

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cs.CR2026

MORDOR: Mitigating Overheads of Read Disturbance Preventive Operations via Elastic Refresh Scheduling

Maria Makeenkova, Ataberk Olgun, F. Nisa Bostancı +3

Modern DRAM chips are susceptible to read disturbance phenomena such as RowHammer, where repeatedly accessing (hammering) a row of DRAM cells (i.e., a DRAM row) induces bitflips in…

cs.CR2026

ScaleDisturb: Exploiting Temporal Asymmetry to Amplify Read Disturbance in Modern DRAM Chips

Jikun Wang, Haocong Luo, Ataberk Olgun +6

DRAM suffers from read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or continuously keeping open a DRAM row (aggressor row) induces bitflips in…

cs.CR2025

Understanding and Mitigating Covert Channel and Side Channel Vulnerabilities Introduced by RowHammer Defenses

F. Nisa Bostancı, Oğuzhan Canpolat, Ataberk Olgun +5

DRAM chips are vulnerable to read disturbance phenomena (e.g., RowHammer and RowPress), where repeatedly accessing or keeping open a DRAM row causes bitflips in nearby rows. Attack…

cs.CR2025

Chronus: Understanding and Securing the Cutting-Edge Industry Solutions to DRAM Read Disturbance

Oğuzhan Canpolat, A. Giray Yağlıkçı, Geraldo F. Oliveira +6

We 1) present the first rigorous security, performance, energy, and cost analyses of the state-of-the-art on-DRAM-die read disturbance mitigation method, Per Row Activation Countin…

cs.CR2024

Spatial Variation-Aware Read Disturbance Defenses: Experimental Analysis of Real DRAM Chips and Implications on Future Solutions

Abdullah Giray Yağlıkçı, Yahya Can Tuğrul, Geraldo F. Oliveira +4

Read disturbance in modern DRAM chips is a widespread phenomenon and is reliably used for breaking memory isolation, a fundamental building block for building robust systems. RowHa…